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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D744
PBSS4140V 40 V low VCEsat NPN transistor
Product data sheet Supersedes data of 2001 Nov 05 2002 Jun 20
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
FEATURES * 300 mW total power dissipation * Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thin package * Improved thermal behaviour due to flat leads * Excellent coplanarity due to straight leads * Low collector-emitter saturation voltage * High current capabilities * Reduced required PCB area. APPLICATIONS * General purpose switching and muting * LCD backlighting * Supply line switching circuits * Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION NPN low VCEsat transistor with high current capability in a SOT666 plastic package. PNP complement: PBSS5140V. MARKING TYPE NUMBER PBSS4140V MARKING CODE 22
1 Top view 2 3
handbook, halfpage
PBSS4140V
QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 1 2 <190 UNIT V A A m
6
5
4 1, 2, 5, 6 3 4
MAM444
Fig.1
Simplified outline (SOT666) and symbol.
2002 Jun 20
2
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM ICRP IB IBM Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current repetitive peak collector current base current (DC) peak base current total power dissipation Tamb 25 C; note 2 Tamb 25 C; note 3 Tamb 25 C; notes 1 and 2 Tstg Tj Tamb Notes 1. Operated under pulsed conditions: tp 30 ms; 0.2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint. storage temperature junction temperature operating ambient temperature note 1 CONDITIONS open emitter open base open collector - - - - - - - - - - - -65 - -65 MIN.
PBSS4140V
MAX. 40 40 5 1 3 2 300 1 300 500 1.2 +150 150 +150
UNIT V V V A A A mA A mW mW W C C C
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 note 2 notes 1 and 3 Notes 1. Device mounted on a printed circuit board; single sided copper; tinplated; standard footprint. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 3. Operated under pulsed conditions: tp 30 ms; 0.2. Soldering The only recommended soldering method is reflow soldering. CONDITIONS VALUE 410 215 110 UNIT K/W K/W K/W
2002 Jun 20
3
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = 40 V; IE = 0 VCB = 40 V; IE = 0; Tamb = 150 C VCE = 30 V; IB = 0 VEB = 5 V; IC = 0 VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A VCE = 5 V; IC = 2 A; note 1 VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA; note 1 IC = 2 A; IB = 200 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp 300 s; 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = 1 A; IB = 100 mA; note 1 IC = 1 A; IB = 100 mA VCE = 5 V; IC = 1 A IC = 50 mA; VCE = 10 V; f = 100 MHz VCB = 10 V; IE = Ie = 0; f = 1 MHz MIN. - - - - 300 300 200 75 - - - - - - - 150 -
PBSS4140V
TYP. - - - - - - - - 50 70 150 320 150 - - - -
MAX. 100 50 100 100 - 900 - - 80 110 190 440 <190 1.2 1.1 - 10
UNIT nA A nA nA
mV mV mV mV m V V MHz pF
2002 Jun 20
4
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140V
handbook, halfpage
1000
MLD746
handbook, halfpage
10
MLD747
hFE 800
(1)
VBE (V)
600
(2)
1 400
(3)
(1) (2) (3)
200
0 -10-1
-1
-10
-102
-103 -104 IC (mA)
10-1 10-1
1
10
102
103 104 IC (mA)
VCE = 5 V. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
VCE = 5 V. (1) Tamb = -55 C. (2) Tamb = 25 C. (3) Tamb = 150 C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
103 handbook, halfpage VCEsat (mV) 102
MLD748
102 handbook, halfpage RCEsat () 10
MLD749
(1)
(2) (3)
10
1
(1) (2) (3)
1 10-1
1
10
102
IC (mA)
103
10-1 10-1
1
10
102
IC (mA)
103
IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
IC/IB = 10. (1) Tamb = 150 C. (2) Tamb = 25 C. (3) Tamb = -55 C.
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Equivalent on-resistance as a function of collector current; typical values.
2002 Jun 20
5
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PBSS4140V
handbook, halfpage
400
MLD750
fT (MHz) 300
200
100
0 0 200 400 600 1000 800 IC (mA)
VCE = 10 V.
Fig.6
Transition frequency as a function of collector current.
2002 Jun 20
6
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
PACKAGE OUTLINE
PBSS4140V
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
S
YS HE
6
5
4
pin 1 index A
1
e1 e
2
bp
3
wMA Lp detail X
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 0.6 0.5 bp 0.27 0.17 c 0.18 0.08 D 1.7 1.5 E 1.3 1.1 e 1.0 e1 0.5 HE 1.7 1.5 Lp 0.3 0.1 w 0.1 y 0.1
OUTLINE VERSION SOT666
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 01-01-04 01-08-27
2002 Jun 20
7
NXP Semiconductors
Product data sheet
40 V low VCEsat NPN transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
PBSS4140V
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
2002 Jun 20
8
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/02/pp9 Date of release: 2002 Jun 20 Document order number: 9397 750 09428

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